Modelowanie tranzystorów mocy SiC BJT w programie PSPICE

Modeling of power SIC bipolar transistors in PSPICE

Joanna Patrzyk         

Abstract: 

This paper deals with the problem of modeling bipolar power transistors made of silicon carbide in PSPICE. The accuracy of built-in PSPICE model of a bipolar transistor was verified experimentally for two silicon carbide power transistors: BT1206AC (produced by TranSiC) and the 2N7635-GA (produced by GeneSiC) The results of simulations and measurements of the output static characteristics of the considered devices are given as well.

Streszczenie: 

Artykuł dotyczy problematyki modelowania bipolarnych tranzystorów mocy, wykonanych z węglika krzemu, w programie PSPICE. Przedstawiono wyniki eksperymentalnej weryfikacji dokładności symulacji wyjściowych charakterystyk statycznych tranzystora BT1206AC firmy TranSiC oraz tranzystora 2N7635-GA firmy GeneSiC, wykonanych z węglika krzemu, z wykorzystaniem modelu tranzystora bipolarnego, wbudowanego w program PSPICE.

Słowa kluczowe: 
modelowanie
SiC BJT
węglik krzemu
Issue: 
Pages: 
168
176
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References: 

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http://www.genesicsemi.com.

Citation pattern: Patrzyk J., Modelowanie tranzystorów mocy SiC BJT w programie PSPICE, Scientific Journal of Gdynia Maritime University, No. 95, pp. 168-176, 2016

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