abbr. SJ GMU
ISSN 2657-5841 (printed)
ISSN 2657-6988 (online)
DOI: 10.26408
Modelowanie tranzystorów mocy SiC BJT w programie PSPICE
Modeling of power SIC bipolar transistors in PSPICE
Abstract:
This paper deals with the problem of modeling bipolar power transistors made of silicon carbide in PSPICE. The accuracy of built-in PSPICE model of a bipolar transistor was verified experimentally for two silicon carbide power transistors: BT1206AC (produced by TranSiC) and the 2N7635-GA (produced by GeneSiC) The results of simulations and measurements of the output static characteristics of the considered devices are given as well.
Streszczenie:
Artykuł dotyczy problematyki modelowania bipolarnych tranzystorów mocy, wykonanych z węglika krzemu, w programie PSPICE. Przedstawiono wyniki eksperymentalnej weryfikacji dokładności symulacji wyjściowych charakterystyk statycznych tranzystora BT1206AC firmy TranSiC oraz tranzystora 2N7635-GA firmy GeneSiC, wykonanych z węglika krzemu, z wykorzystaniem modelu tranzystora bipolarnego, wbudowanego w program PSPICE.
Słowa kluczowe:
modelowanie
SiC BJT
węglik krzemu
Issue:
Pages:
168
176
Download full text in pdf:
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